molecular beam epitaxy (mbe) meaning in English
分子束磊晶法；分子子束外延
Examples
- High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap衬底上，本征型和n型al掺杂zns基单晶薄膜的分子束外延生长，获得了高质量的单晶外延薄膜。 - To study its properties and obtain high quality thin films , a variety of techniques have been used such as molecular beam epitaxy ( mbe ) , metal organic chemical vapor deposition ( mocvd ) , magnetron sputtering , pulsed laser deposition , to prepare zno thin films
为了获得高质量的氧化锌薄膜材料，人们已采用分子束外延，有机化学汽相沉积，脉冲激光沉积，磁控溅射等各种技术来制备氧化锌薄膜材料。 - Fortunately , with the improvement in the material growth , gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ) . more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect , for this reason , gap1 - xnx alloys are usually called abnormal alloys
人们研究发现， gapn混晶具有一些独特的光电性质，例如其带隙不是gap和gan的线性内插值，而是存在着较大的带隙降低和巨大的带隙弯曲系数，因此gapn混晶又被称为“反常”混晶，从而引起了人们越来越多的关注，并成为当前的一个研究热点。 - Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer . the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ) , scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文采用分子束外延( mbe )方法在gaas ( 001 )衬底上优化低温缓冲层生长条件制备了异质外延insb薄膜,采用原子力显微镜( afm ) 、扫描电镜( sem )与x射线双晶衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌与结晶质量。